Silicon Carbide MESFET High Frequency Oscillator for Microwave Applications
Boggadi Nagarjuna Reddy
Boggadi Nagarjuna Reddy, Ph.D scholar, high speed and frequency SiC devices and integrated circuits, at Bharath Institute of Higher Education and Research, Chennai.
Manuscript received on September 02, 2019. | Revised Manuscript received on September 10, 2019. | Manuscript published on September 15, 2019. | PP: 1-4 | Volume-6, Issue-2, September 2019. | Retrieval Number: A11410076119/2019©BEIESP | DOI: 10.35940/ijisme.A1141.096219
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© The Authors. Published By: Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The Gouriet oscillator is mainly dealing with 4H-SiC metal semiconductor field effect transistor is fabricated with HPSI substrate and passive integrated elements are based on design for demand of the required function of frequency 1GHz. This high frequency or temperature oscillator is operated from 30 to 200˚C, the gain of the delivered power of 21.8dbm at the frequency of 1GHz and the temperature of 200˚C. The oscillator transistor output response is at 200˚C, the improved percentage is 15%. This output response of the difference in between the frequency around the vary of temperature is less than 0.5%.
Keywords: MESFET, Silicon Carbide, Temperature, Frequency, etc.